High Energy Thick Film Ceramic Resistors

High Energy Thick Film Ceramic Resistors allows simple, efficient resistor designs that enable the designer to minimize the resistor package size while providing the required performance and reliability. High Energy Thick Film Ceramic Resistors offers the user the benefits of non-inductive performance and high power density. They provide the impulse energy capability normally associated with wirewound or composition resistors. Doublesided screen printing of pulse-tolerant thick film resistor, coupled with a sophisticated scan-cut laser trimming process, maximize the energy withstanding capabilities.

High Energy Thick Film Ceramic Resistors also calls Power Chip Thick Film Ceramic Resistors, It is a new technology to print the thick film resistor on the ceramic substrate, with high performances of High-Temp Terminal Construction, Wide Resistance Range, Low Inductance (50nH100nH), High Power Density, PC-mountable, and Easy to install etc.

High Energy Thick Film Ceramic Resistors can be manufactured in many geometries and sizes, from fractional watts to kilowatts. Design requirements for custom sizes, surface mount, or special footprints can be met easily. High Energy Thick Film Ceramic Resistors are ideal for a wide range of requirements in equipment such as radar, motor drives, broadcast transmitters, RF amplifiers, semiconductor process, power conditioning, xray, lasers, medical defibrillators, and energy research.

Specification:

Substrate: Alumina
Resistor: Thick Film
Coating: Glass
Thermal Conductivity：20 Watts/Meter/°C
Temperature Coefficient： 1 to 100Ω: 100 ppm/°C， 101Ω and up: 50 ppm/°C
Tolerance： ±1%, ±5% and ±10%
Power Rating： Based on 25°C free air
Resistance Range： 10 ohms to 1M ohm. Consult factory for other values
Maximum Operating Voltage： 350 VAC, 500 VDC through glass
Energy Rating： 100J: 100ms pulse with 100uF capacitor, not to exceed 1500 volts
Derating： 100% @ 25°C to 0% @ 180°C ambient.

High Energy Thick Film Ceramic Resistors Features:
◆ rated power: 2.5w-20w

◆ resistance range: 10 Ω ~ 1000m Ω

◆ allowable deviation: ± 1% ～ ± 10%

◆ temperature coefficient: minimum ± 50ppm (25 ℃ ~ 105 ℃)

◆ insulation withstand voltage: > 1000VDC

◆ insulation resistance: ≥ 10g Ω

◆ working temperature range: - 55 ℃ ~ + 225 ℃

◆ maximum working voltage: 48kvdc

◆ inductance: non inductive

◆ connectors: tinned iron cap

◆ resistance installation: Welding

◆ overload: 5p value does not exceed 1.5umax5s, Δ R≤±0.2%R

◆ service life: rated power 1000h, Δ R≤±0.5%R

◆ steady state damp heat: mil-std-202, method 103, condition D, Δ R≤±0.4%R

◆ thermal shock: mil-std-202, method 107, condition C, Δ R≤±0.2%R

Applications:

Motor drive circuits

Snubber circuits

Bleeder

Capacitor charge/discharge

High-frequency circuits

Impulse generators

High-voltage circuits

X-ray equipment

High voltage power supplies

Laser/Imaging equipment

Capacitor charge/discharge

RF dummy loads

Dynamic braking

Transformer protection

For more information ,Please refer to "Thick-Film-Hybrid-Circuit"